Datasheet > 2SD1950

2SD1950

更新时间： 2024-11-18 12:53:43

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关
页数	文件大小	规格书
1页	150K
描述
High dc current gain and good hFE. Low collector saturation voltage. High VEBO.

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2SD1950 数据手册

SMD Type

TransistIoCrs

Product specification

2SD1950

Features

High dc current gain and good h^FE.

Low collector saturation voltage.

High V^EBO.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector current (Pulse) *

Total power dissipation

Junction temperature

Storage temperature

I^C

P^T

T^j

150

T^stg

-55 to +150

* PW

10ms, duty cycle

50%

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

Testconditons

Min

Typ

Max

100

Unit

I^CBO

I^EBO

V^CB= 30 V, I^E= 0

V^EB= 10 V, I^C= 0

V^CE= 5.0 V, I^C= 1.0 A

V^CE= 5.0 V, I^C= 2.0 A

800 1500 3200

400

DC current gain *

hFE

Collector saturation voltage

Base saturation voltage

Base to emitter voltage *

Gain bandwidth product

Output capacitance

V^CE(sat)I^C= 1 A, I^B= 10 mA

V^BE(sat)I^C= 1 A, I^B= 10 mA

0.18

0.83

660

350

0.3

1.2

700

V^BE

f^T

V^CE= 5.0 V, I^C= 300 mA

V^CE= 10 V, I^E= -500 mA

VCB = 10 V, IE = 0 , f = 1.0 MHz

600

150

MHz

Cob

* Pulsed: PW

350 ìs, duty cycle

hFE Classification

Marking

hFE

800 1600

1200 2400

2000 3200

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2SD1950-AZ	NEC	获取价格	暂无描述
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2SD1950VK-AZ	NEC	获取价格	暂无描述