Datasheet > 2SD2122S

2SD2122S

更新时间： 2024-11-21 12:53:43

品牌	Logo	应用领域
TYSEMI		晶体放大器晶体管功率放大器
页数	文件大小	规格书
1页	146K
描述
Low frequency power amplifier. Collector to base voltage VCBO 180 V

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中文翻译

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数据手册

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2SD2122S 数据手册

SMD Type

TransistIoCrs

Product specification

2SD2122S

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

Low frequency power amplifier.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

VCEO

V^EBO

I^C

Rating

Unit

180

120

1.5

Peak collector current

I^CP

P^C

Collector power dissipation T^C= 25

Junction temperature

150

Storage temperature

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBOI^C= 1 mA, I^E= 0

V^(BR)CEO

Testconditons

Min

180

120

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

I^C= 10 mA, R^BE=

V^(BR)EBOI^E= 1 mA, I^C= 0

I^CBO

h^FE

V^CB= 160 V, I^E= 0

ìA

V^CE= 5 V,I^C= 150 mA

V^CE= 5 V,I^C= 500 mA

200

DC current transfer ratio *

Collector to emitter saturation voltage

Base to emitter voltage

Gain bandwidth product

Collector output capacitance

* Pulse test

V^CE(sat)I^C= 500 mA,I^B= 50 mA

V^BE

f^T

V^CE= 5 V,I^C= 150 mA

1.5

180

MHz

C^ob

V^CB= 10 V, I^E= 0,f = 1 MHz

hFE Classification

Marking

hFE

60 120

100 200

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sales@twtysemi.com

4008-318-123

中文翻译

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