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2SC3648 PDF预览

2SC3648

更新时间: 2024-11-20 12:53:39
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关
页数 文件大小 规格书
3页 545K
描述
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity

2SC3648 数据手册

 浏览型号2SC3648的Datasheet PDF文件第2页浏览型号2SC3648的Datasheet PDF文件第3页 
Product specification  
2SC3648  
Features  
Adoption of FBET, MBIT Processes  
High Breakdown Voltage and Large Current Capacity  
Fast Switching Speed  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
180  
Unit  
V
160  
V
6
V
Collector Current  
0.7  
A
Collector Current (Pulse)  
ICP  
1.5  
A
PC  
500  
mW  
W
Collector Power Dissipation  
PC *  
Tj  
1.3  
Jumction temperature  
150  
Storage temperature Range  
Tstg  
-55 to +150  
* Mounted on ceramic board (250 mm2 x 0.8 mm)  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
IEBO  
Testconditons  
Min  
Typ  
Max  
0.1  
Unit  
uA  
uA  
V
Collector Cut-off Current  
VCB = 120V , IE = 0  
VEB = 4V , IC = 0  
Emitter Cut-off Current  
0.1  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
V(BR)CBO IC = 10uA , IE = 0  
V(BR)CEO  
180  
160  
6
V
IC = 1mA , RBE =  
V(BR)EBO IE = 10uA , IC = 0  
hFE VCE = 5V , IC = 100mA  
V
100  
400  
0.5  
1.2  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Gain-Bandwidth Product  
VCE(sat) IC = 250mA , IB = 25mA  
VBE(sat) IC = 250mA , IB = 25mA  
0.2  
0.85  
120  
11  
V
V
fT  
VCE = 10V , IC = 50mA  
MHz  
pF  
Collector Output Capacitance  
Cob  
VCB = 10V , IE = 0 , f = 1MHz  
Turn-On Time  
Storage Time  
Fall Time  
ton  
tstg  
tf  
60  
900  
60  
See Test Circuit.  
ns  
http://www.twtysemi.com  
1 of 3  
sales@twtysemi.com  
4008-318-123  

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