Datasheet > 2SC3651

2SC3651

更新时间： 2024-11-24 12:53:39

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
1页	70K
描述
High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC3651 数据手册

SMD Type

Transistors

Product specification

2SC3651

Features

High DC current gain

High breakdown voltage

Low colleotor-to- emitter saturation voltage

High V^EBO(V^EBO15V)

Very small size making it easy to provide high-density

small-sized hybrid IC's.

Absolute Maximum Ratings Ta = 25

Parameter

collector-base voltage

collector-emitter voltage

emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

120

Unit

100

collector current

200

Collector Current (pulse)

I^CP

300

500

Collector Dissipation

P^C

1.3 *

150

Junotion Temperature

T^J

storage Temperature

T^stg

-55 to 150

*Mounted on ceramic board (250mm²X0.8mm)

Electrical Characteristics Ta = 25

Parameter

collector cutoff Current

Emitter cutoff current

Symbol

ICBO

Testconditons

Min

Typ

Max

0.1

Unit

ìA

VCB=80V,IE=0

I^EBO

V^EB=10V,I^C=0

0.1

ìA

V^CE=5V,I^C=10mA

V^CE=5V,I^C=100mA

V^CE=10V,I^C=10mA

V^CB=10V,f=1MHz

I^C=100mA,I^B=2mA

I^C=100mA,I^E=2mA

I^C=100ìA,I^E=0

500 1000 2000

DC Current Gain

h^FE

400

150

6.5

Gain-Bandwidth product

f^T

MHz

Output Capacitance

cob

Collector to Emitter Saturation Voltage

Base to Emitter Stauration Voltage

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

V^CE(sat)

V^BE(sat)

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

0.15

0.5

I^C=1mA,I^B=0

I^E=10ìA,I^C=0

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

中文翻译

下载PDF

与2SC3651相关器件

型号	品牌	获取价格	描述	数据表
2SC3651_1	SANYO	获取价格	High hFE, Low-Frequency General-Purpose Amplifier Applications
2SC3651-TD-E	ONSEMI	获取价格	TRANSISTOR,BJT,NPN,100V V(BR)CEO,200MA I(C),SOT-89
2SC3652	HITACHI	获取价格	SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER
2SC3652	RENESAS	获取价格	Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-126MOD, 3 PIN
2SC3653	SANYO	获取价格	PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS
2SC3653-AQ	ONSEMI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC3654	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| TO-92
2SC3654-AB	ONSEMI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC3654-AQ	ONSEMI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC3655	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| TO-92