Datasheet > 2SC3645

2SC3645

更新时间： 2024-11-20 12:53:39

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
3页	530K
描述
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)

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数据手册

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2SC3645 数据手册

SMD Type

Product specification

2SC3645

Features

Adoption of FBET Process

High Breakdown Voltage (VCEO = 160V)

Excellent Linearlity of h^FEand Small C^ob

Fast Switching Speed

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

180

Unit

160

Collector Current

140

Collector Current (Pulse)

I^CP

200

P^C

500

Collector Power Dissipation

P^{C *}

T^j

1.3

Jumction temperature

150

Storage temperature Range

T^stg

-55 to +150

* Mounted on ceramic board (250 mm²x 0.8 mm)

Electrical Characteristics Ta = 25

Parameter

Symbol

ICBO

Testconditons

Min

100

Typ

Max

100

400

0.4

Unit

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

VCB = 80V , IE = 0

V^EB= 4V , I^C= 0

I^EBO

h^FE

V^CE= 5V , I^C= 10mA

Collector-Emitter Saturation Voltage

Gain-Bandwidth Product

Collector Output Capacitance

VCE(sat) IC = 50mA , IB = 5mA

0.14

150

f^T

V^CE= 10V , I^C= 10mA

MHz

C^ob

V^CB= 10V , I^E= 0 , f = 1MHz

Turn-On Time

Storage Time

Fall Time

t^on

t^stg

t^f

0.1

1.5

0.1

See Test Circuit.

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与2SC3645相关器件

型号	品牌	获取价格	描述	数据表
2SC3645_15	KEXIN	获取价格	NPN Transistors
2SC3645-HF_15	KEXIN	获取价格	NPN Transistors
2SC3645R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 140MA I(C) \| SOT-89
2SC3645-R	KEXIN	获取价格	NPN Transistors
2SC3645-R-HF	KEXIN	获取价格	NPN Transistors
2SC3645S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 140MA I(C) \| SOT-89
2SC3645-S-HF	KEXIN	获取价格	NPN Transistors
2SC3645T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 140MA I(C) \| SOT-89
2SC3645-T	KEXIN	获取价格	NPN Transistors
2SC3645-T-HF	KEXIN	获取价格	NPN Transistors