Datasheet > 2SC3647

2SC3647

更新时间： 2024-11-20 12:53:39

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
3页	580K
描述
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity

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2SC3647 数据手册

SMD Type

Product specification

2SC3647

Features

Adoption of FBET, MBIT Processes

High Breakdown Voltage and Large Current Capacity

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

120

100

Collector Current

Collector Current (Pulse)

I^CP

500

P^C

Collector Power Dissipation

P^{C *}

T^j

1.5

Jumction temperature

150

Storage temperature Range

T^stg

-55 to +150

* Mounted on ceramic board (250 mm²x 0.8 mm)

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

100

Unit

Collector Cut-off Current

ICBO

VCB = 100V , IE = 0

V^EB= 4V , I^C= 0

Emitter Cut-off Current

I^EBO

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

V^(BR)CBOI^C= 10uA , I^E= 0

V^(BR)CEO

120

100

I^C= 1mA , R^BE=

V^(BR)EBOI^E= 10uA , I^C= 0

h^FEV^CE= 5V , I^C= 100mA

100

400

0.6

1.2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Gain-Bandwidth Product

V^CE(sat)I^C= 1A , I^B= 100mA

V^BE(sat)I^C= 1A , I^B= 100mA

0.22

0.85

120

f^T

V^CE= 10V , I^C= 100mA

MHz

Collector Output Capacitance

C^ob

V^CB= 10V , I^E= 0 , f = 1MHz

Turn-On Time

Storage Time

Fall Time

t^on

t^stg

t^f

750

See Test Circuit.

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