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Product specification
2SC3689
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
Small Cob (Cob=1.5pF typ).
Adoption of FBET process.
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat) 0.5V).
High VEBO (VEBO 15V).
1
2
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
Rating
60
Unit
V
VCBO
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current
50
V
15
V
100
mA
mA
mW
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Icp
200
PC
200
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VCB = 40V, IE=0
Min
Typ
Max
0.1
Unit
ìA
Collector cutoff current
ICBO
IEBO
hFE
fT
Emitter cutoff current
VEB = 10V, IC=0
0.1
ìA
DC current gain
VCE =5V , IC = 10mA
VCE = 10V , IC = 10mA
VCB = 10V , f = 1.0MHz
800 1500 3200
Gain bandwidth product
200
1.5
MHz
pF
V
Output capacitance
Cob
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCE(sat) IC = 50mA , IB = 1mA
VBE(sat) IC = 50mA , IB = 1mA
V(BR)CBO IC = 10ìA , IE = 0
0.1
0.8
0.5
1.1
V
60
50
15
V
V(BR)CEO
V
IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
V
Marking
Marking
GY
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