Datasheet > 2SC3650

2SC3650

更新时间： 2024-11-08 12:53:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管放大器
页数	文件大小	规格书
1页	62K
描述
High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage

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2SC3650 数据手册

SMD Type

Transistors

Product specification

2SC3650

Features

High DC current gain (hFE=800 to 3200).

Low collector-to-emitter saturation voltage

(V^CE(sat)0.5V).

Large current capacity (I^C=1.2V).

Very small size making it easy to provide highdensity,

small-sized hybrid IC’s.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

1.2

Collector current (pulse)

Collector dissipation

I^cp

P^C

500

Junction temperature

Storage temperature

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

V^CB=20V, I^E=0

Min

Typ

Max

0.1

Unit

ìA

Collector cutoff current

Emitter cutoff current

I^EBO

h^FE

f^T

V^EB=10V, I^C=0

0.1

ìA

DC current gain

V^CE=5V, I^C=500mA

V^CE=10V, I^C=50mA

V^CB=10V, f=1MHz

800 1500 3200

Gain bandwidth product

220

MHz

Output capacitance

C^ob

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V^CE(sat)IC=500mA, IB=10mA

V^BE(sat)I^C=500mA, I^B=10mA

V^(BR)CBOI^C=10ìA, I^E=0

0.12

0.85

0.5

1.2

V^(BR)CEO

I^C=1mA, R^BE=

V^(BR)EBOI^E=10ìA, I^C=0

Marking

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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