Datasheet > 2SB1396

2SB1396

更新时间： 2024-11-22 12:53:39

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
1页	77K
描述
Adoption of FBET,MBIT processes Large current capacity

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中文翻译

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数据手册

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2SB1396 数据手册

Product specification

2SB1396

Features

Adoption of FBET,MBIT processes

Large current capacity

Low collector to emitter saturation voltage

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

VCEO

V^EBO

I^C

Rating

Unit

-15

-10

-7

-3

-5

Collector current (Pulse)

Collector dissipation *

Junction temperature

Storage temperature

ICP

P^C*

T^j

1.3

150

T^stg

-55 to +150

* Mounted on ceramic PCB (250mm²X0.8mm)

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I^CBO

I^EBO

Testconditons

V^CB= -12V, I^E=0

Min

Typ

Max

-100

560

Unit

ìA

V^EB= -6V, I^C=0

ìA

V^CE=-2V , I^C= -0.5A

VCE =-2V , IC = -3A

VCE =-2V , IC = -0.3A

V^CE= -10V , f=1MHz

I^C=-1.5A,I^B=-30mA

IC=-10ìA,IE=0

140

DC current Gain

h^FE

Gain bandwidth product

Output capacitance

400

GHz

C^ob

C-E Saturation Voltage

B-E Saturation Voltage

C-B Breakdown Voltage

C-E Breakdown Voltage

E-B Breakdown Voltage

V^CE(sat)

V^BE(sat)

V(BR)CBO

V^(BR)CEO

V^(BR)EBO

-220 -400

-0.9 -1.2

-15

-10

-7

I^C=-1mA,R^BE=

I^E=-10ìA,I^C=0

hFE Classification

Marking

Rank

hFE

140 280

200 400

280 560

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4008-318-123

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