Datasheet > 2SB1302

2SB1302

更新时间： 2024-11-19 12:53:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关
页数	文件大小	规格书
2页	112K
描述
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.

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2SB1302 数据手册

Product specification

2SB1302

Features

Adoption of FBET, MBIT processes.

Low collector-to-emitter saturation voltage.

Large current capacity.

Fast switching speed.

Very small size making it easy to provide highdensity,

small-sized hybrid ICs.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-25

-20

-5

-8

Collector current (pulse)

Collector dissipation

I^CP

P^C

1.3

Jumction temperature

Storage temperature

T^j

150

Tstg

-55 to +150

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2SB1302S-TD-E	ONSEMI	获取价格	Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP
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