Datasheet > 2SB1197K

2SB1197K

更新时间： 2024-11-18 12:53:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	62K
描述
Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA .PNP silicon transistor

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2SB1197K 数据手册

Product specification

2SB1197K

SOT-23

Unit: mm

+0.1

-0.1

Features

2.9

0.4

+0.1

-0.1

Low VCE(sat).VCE(sat)

IC = -0.8A.

-0.5V IC / IB= -0.5A / -50mA

PNP silicon transistor

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base Voltage

Collector-emitter Voltage

Emitter-base Voltage

Symbol

Rating

-40

Unit

VCBO

VCEO

VEBO

-32

-5

Collector current

-0.8

Collector power dissipation

Jumction temperature

Storage temperature

0.2

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-40

-32

-5

Typ

Max

Unit

Collector-base breakdown voltae

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

VCBO

VCEO

VEBO

ICBO

IC = -50

IC = -1mA

IE = -50

VCB = -20V

VEB = -4V

-0.5

390

Emitter cutoff current

IEBO

Collector-Emitter Saturation Voltage

DC current transfer ratio

VCE(sat) IC = -0.5A , IB = -50mA

hFE

Cob

VCE = -3V , IC = -100mA

120

Output Capacitance

VCB = -10V , IE = 0A , f = 1MHz

Transition frequency

VCE = -5V , IE = 50mA , f = 100MHz

200

MHz

hFE Classification

Marking

Rank

AHQ

AHR

hFE

120 270

180 390

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