Datasheet > 2SB1325

2SB1325

更新时间： 2024-11-20 12:53:39

品牌	Logo	应用领域
TYSEMI		晶体二极管晶体管
页数	文件大小	规格书
2页	82K
描述
Low saturation voltage. Contains diode between collector and emitter.

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2SB1325 数据手册

SMD Type

Transistors

Product specification

2SB1325

Features

Low saturation voltage.

Contains diode between collector and emitter.

Contains bias resistance between base and emitter.

Large current capacity.

Small-sized package making it easy to provide highdensity,

small-sized hybrid ICs.

Electrical Connection

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-25

Collector-emitter voltage

Emitter-base voltage

Collector current

-20

-6

-4

-6

Collector current (pulse)

Collector dissipation

Jumction temperature

Storage temperature

I^CP

P^C*

T^j

1.5

150

T^stg

-55 to +150

* Mounted on ceramic board (250mm²X0.8mm)

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