Datasheet > 2SB1175

2SB1175

更新时间： 2024-02-29 03:58:26

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描述
Satisfactory linearity of forward current transfer ratio hFE. Large collector current IC.

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中文翻译

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技术参数
数据手册

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2SB1175 技术参数

生命周期：	Lifetime Buy	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
最大集电极电流 (IC)：	4 A	配置：	Single
最小直流电流增益 (hFE)：	60	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	1.3 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SB1175 数据手册

Product specification

2SB1175

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

Low collector-emitter saturation voltage V^CE(sat).

Satisfactory linearity of forward current transfer ratio h^FE.

Large collector current I^C.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

-130

Collector-emitter voltage

Emitter-base voltage

Collector current

-80

-7

-4

-8

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

P^C

1.3

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-80

Typ

Max

Unit

Collector-emitter voltage

Collector-emitter cutoff curent

Emitter-base cutoff current

V^CEO

I^CEO

I^EBO

I^C= -10 mA, I^B= 0

V^CE= -100 V,I^B= 0

V^EB= -5 V, I^C= 0

-10

-50

260

ìA

V^CE= -2 V, I^C= -1 A

V^CE= -2 V, I^C= -0.1 A

Forward current transfer ratio

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Turn-on time

V^CE(sat)I^C= -3 A, I^B= -0.15 A

V^BE(sat)I^C= -3 A, I^B= -0.15 A

-0.5

-1.5

f^T

t^on

t^stg

t^f

V^CE= -10 V, I^C= -0.5 A , f = 10 MHz

MHz

ìs

0.15

0.8

I^C= -1 A,I^B1= -0.1 A,I^B2= 0.1 A, V^CC=

-50 V

Storage time

ìs

Fall time

0.15

ìs

hFE Classification

Rank

h^FE

90 180

130 260

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