Datasheet > 2SB1169A

2SB1169A

更新时间： 2024-09-16 12:53:39

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描述
High forward current transfer ratio hFE which has satisfactory linearity.

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中文翻译

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数据手册

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2SB1169A 数据手册

SMD Type

Transistors

Product specification

2SB1169A

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

High forward current transfer ratio h^FEwhich has satisfactory linearity.

Low collector-emitter saturation voltage V^CE(sat).

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-80

Collector-emitter voltage

Emitter-base voltage

Collector current

-80

-5

-1

-2

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

P^C

1.3

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CEO

V^BE

Testconditons

Min

-80

Typ

Max

Unit

Collector-emitter voltage

Base to emitter voltage

I^C= -30 mA, I^B= 0

V^CE= -4 V, I^C= -1 A

V^CE= -80 V,V^BE= 0

V^CE= -60 V,I^B= 0

V^EB= -5 V, I^C= 0

-1.3

-200

-300

-1

Collector-emitter cutoff curent

Emitter-base cutoff current

I^CES

ìA

I^CEO

I^EBO

V^CE= -4 V, I^C= -0.2 A

V^CE= -4 V, I^C= -1 A

450

Forward current transfer ratio

h^FE

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V^CE(sat)I^C= -1 A, I^B= -0.125 A

-1

MHz

ìs

f^T

t^on

t^stg

t^f

V^CE= -10 V, I^C= -0.5 A , f = 10 MHz

0.5

1.2

0.3

I^C= -1 A,I^B1= -50 mA,I^B2= 50 mA,

V^CC= -50 V

Storage time

ìs

Fall time

ìs

hFE Classification

Rank

h^FE

40 90

70 150

120 250

200 450

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