Datasheet > 2SB1266

2SB1266

更新时间： 2024-11-18 12:53:39

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描述
Suitable for sets whose heighit is restricted. High reliability.

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中文翻译

获取价格

数据手册

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2SB1266 数据手册

Product specification

2SB1266

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

Suitable for sets whose heighit is restricted.

High reliability.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

VCEO

V^EBO

I^C

Rating

Unit

-60

-6

-3

-8

Collector current (pulse)

Collector dissipation

T^C= 25

I^CP

1.65

P^C

Jumction temperature

Storage temperature

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I^CBO

Testconditons

Min

Typ

Max

Unit

ìA

V^CB= -40V , I^E= 0

V^EB= -4V , I^C= 0

-100

280

I^EBO

ìA

V^CE= -5V , I^C= -0.5A

V^CE= -5V , I^C= -3A

V^CE= -5V , I^C= -0.5A

V^CB= -10V , f = 1MHz

DC current Gain

h^FE

Gain bandwidth product

f^T

MHz

Output capacitance

C^ob

Collector-emitter saturation voltage

Base-emitter voltage

V^CE(sat)IC = -2A , IB = -0.2A

V^BEI^CE= -5V , I^C= -0.5A

V^(BR)CBOI^C= -1mA , I^E= 0

-0.4

-0.7

-1

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

-60

-6

I^C= -5mA , R^BE=

I^E= -1mA , I^C= 0

V^(BR)CEO

V^(BR)EBO

hFE Classification

Rank

hFE

70 140

100 200

140 280

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2SB1266-R	KEXIN	获取价格	PNP Transistors
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2SB1266-S	KEXIN	获取价格	PNP Transistors
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2SB1267Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 8A I(C) \| TO-220
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