Datasheet > 2SB1220

2SB1220

更新时间： 2024-11-18 12:53:39

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描述
High collector-emitter voltage VCEO Low noise voltage NV

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2SB1220 数据手册

Product specification

2SB1220

Features

High collector-emitter voltage V^CEO

Low noise voltage NV

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CP

Rating

-150

Unit

-150

-5

Peak collector current

Collector current

-100

I^C

-50

Collector power dissipation

Junction temperature

Storage temperature

P^C

150

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CEO

V^EBO

I^CBO

Testconditons

Min

-150

-5

Typ

Max

Unit

Collector-emitter voltage

Emitter-base voltage

I^C= -100 ìA, I^B= 0

I^E= -10 ìA, I^C= 0

Collector-base cutoff current

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

V^CB= -100 V, I^E= 0

V^CE= -5 V, I^C= -10 mA

-1

450

-1

ìA

h^FE

130

V^CE(sat)I^C= -30 mA, I^B= -3 mA

f^T

V^CB= -10 V, I^E= 10 mA, f = 200 MHz

V^CB= -10 V, I^E= 0, f = 1 MHz

200

MHz

Collector output capacitance

C^ob

V^CE= -10 V, I^C= -1 mA, G^V= 80 dB,

R^g^{= 100KÙ}, ^{Function = FLAT}

Noixe voltage

150

hFE Classification

Marking

Rank

h^FE

130 220

185 330

260 450

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2SB1220G-S	PANASONIC	获取价格	50mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, SMINI3-F2, 3 PIN
2SB1220GT	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, ROHS
2SB1220G-T	PANASONIC	获取价格	50mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, SMINI3-F2, 3 PIN
2SB1220H	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon
2SB1220R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 50MA I(C) \| SC-70