Datasheet > 2SB1386

2SB1386

更新时间： 2024-09-19 12:53:39

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描述
Low VCE(sat). VCE(sat) = -0.35V (Typ.) Excellent DC current gain

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2SB1386 数据手册

Product specification

2SB1386

Features

Low VCE(sat).

V^CE(sat)= -0.35V (Typ.)

(I^C/IB = -4A / -0.1A)

Excellent DC current gain

Epitaxial planar type

PNP silicon transistor

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-30

-20

-6

-5

Collector current

Collector current(Pulse)

Collector power dissipation

Junction temperature

Storage temperature

I^CP*

P^C

-10

0.5

150

T^stg

-55 to +150

* Single pulse, Pw=10ms

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

Testconditons

Min

-30

-20

-6

Typ

Max

Unit

BV^CBOI^C=-50ìA

BV^CEOI^C=-1mA

BV^EBOI^E=-50ìA

I^CBO

V^CB=-20V

VEB=-5V

-0.5

-1

ìA

Emitter cutoff current

IEBO

DC current transfer ratio

V^CE(sat)I^C=-4A,I^B=-0.1A

Collector-emitter saturation voltage

Transition frequency

hFE

C^ob

f^T

V^CE=-2V, I^C=-0.5A

390

V^CE=-6V, I^E=50mA, f=30MHz

V^CB=-20V, I^E=0A, f=1MHz

120

MHz

Output capacitance

hFE Classification

Marking

Rank

hFE

82 180

120 270

180 390

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