Datasheet > PHN103S

PHN103S

更新时间： 2024-11-28 23:27:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	97K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 25V V(BR)DSS \| 6A I(D) \| SO

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PHN103S 数据手册

Philips Semiconductors

Product specification

N-channel TrenchMOS^TMtransistor & schottky diode

PHN103S

FEATURES

SYMBOL

QUICK REFERENCE DATA

• MOSFET + Schottky diode in the

same package

• Low threshold voltage

• Extremely fast switching

• Logic level compatible

• Surface mount package

V_DS= 25 V

I_D= 5.8 A

_DS(ON)≤ 35 mΩ (V_GS= 10 V)

R_DS(ON)≤ 60 mΩ (V_GS= 4.5 V)

V_F(schottky) < 0.55 V

GENERAL DESCRIPTION

PINNING

SOT96-1

N-channel enhancement mode

field-effect transistor and schottky

diode in the same plastic envelope.

The MOSFET uses ’trench’

technology to achieve low on-state

resistance.

DESCRIPTION

anode (a)

source (s)

1,2

gate (g)

Applications:-

pin 1 index

• d.c. to d.c. converters

• motor drivers

• relay and actuator drivers

5,6

7,8

drain (d)

cathode (k)

The PHN103S is supplied in the

SOT96-1 (SO8) surface mounting

package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

Repetitive peak drain-source

voltage

T_j= 25 ˚C to 150˚C

V_DS

V_DGR

V_GS

I_D

Continuous drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current¹

± 20

5.8

4.6

1.3

150

R_GS= 20 kΩ

T_a= 25 ˚C

T_a= 70 ˚C

T_a= 25 ˚C

T_a= 70 ˚C

I_DM

P_tot

Drain current (pulse peak value)

Total power dissipation

˚C

T_stg, T_j

Storage & operating temperature

- 65

1 Surface mounted on FR4 board, t ≤ 10 sec

September 1999

Rev 1.000

12 3 4 5 6 7 8

中文翻译

下载PDF

与PHN103S相关器件

型号	品牌	获取价格	描述	数据表
PHN103T	NXP	获取价格	TRANSISTOR 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SO-8, FET General
PHN103T,118	NXP	获取价格	PHN103T
PHN103T/R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| SO
PHN103T/T3	NXP	获取价格	TRANSISTOR 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SO-8, FET General
PHN105-TAPE-7	NXP	获取价格	TRANSISTOR 4.8 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
PHN110	NXP	获取价格	N-channel enhancement mode MOS transistor
PHN110T/R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 4A I(D) \| SO
PHN203	NXP	获取价格	Dual N-channel enhancement mode TrenchMOS transistor
PHN203,118	NXP	获取价格	PHN203 - Dual N-channel TrenchMOS logic level FET SOIC 8-Pin
PHN205	NXP	获取价格	Dual N-channel enhancement mode MOS transistor