5秒后页面跳转
PHN603S PDF预览

PHN603S

更新时间: 2024-09-29 22:26:31
品牌 Logo 应用领域
恩智浦 - NXP 驱动器肖特基二极管电机
页数 文件大小 规格书
7页 118K
描述
TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver

PHN603S 数据手册

 浏览型号PHN603S的Datasheet PDF文件第2页浏览型号PHN603S的Datasheet PDF文件第3页浏览型号PHN603S的Datasheet PDF文件第4页浏览型号PHN603S的Datasheet PDF文件第5页浏览型号PHN603S的Datasheet PDF文件第6页浏览型号PHN603S的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
TrenchMOS/ Schottky diode array  
PHN603S  
Three phase brushless d.c. motor driver  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Schottky diode across each  
MOSFET  
• Low on-state resistance  
• Fast switching  
• Logic level compatible  
• Surface mount package  
D4  
VDS = 25 V  
ID = 5.5 A  
G5  
D2  
G6  
D1  
G4  
D3  
R
DS(ON) 35 m(VGS = 10 V)  
RDS(ON) 55 m(VGS = 4.5 V)  
G1  
G2  
G3  
S1  
S2  
S3  
GENERAL DESCRIPTION  
PINNING  
SOT137-1 (SO24)  
Six n-channel, enhancement  
mode, logic level, field-effect  
power transistors and six schottky  
diodes configured as three  
half-bridges. This device has low  
on-state resistance and fast  
PIN  
DESCRIPTION  
Top view  
24  
1
1,4  
2
3
5,8  
6
7
9,12  
10  
11  
13  
drain 1  
source 1  
gate 1  
drain 2  
source 2  
gate 2  
drain 3  
source 3  
gate 3  
switching.  
The  
intended  
applicationis in computer disk and  
tape drives as a three phase  
brushless d.c. motor driver.  
The PHN603S is supplied in the  
gate 4  
SOT137-1  
mounting package.  
(SO24)  
surface  
14-16, 18-20, 22-24 drain 4  
17  
21  
gate 5  
gate 6  
12  
13  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
Repetitive peak drain-source  
voltage  
Continuous drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Drain current per device (DC)  
Tj = 25 ˚C to 150˚C  
-
25  
V
VDS  
VDGR  
VGS  
ID  
Tj 80 ˚C1  
RGS = 20 kΩ  
-
-
-
-
-
-
25  
25  
± 20  
5.5  
3.5  
22  
V
V
V
A
A
A
Ta = 25 ˚C  
Ta = 100 ˚C  
Ta = 25 ˚C  
IDM  
Drain current per device (pulse  
peak value)  
Ptot  
Total power dissipation per device Ta = 25 ˚C  
-
-
-
-
1.67  
0.67  
2.78  
1.11  
150  
W
W
W
W
˚C  
Ta = 100 ˚C  
Ptot  
Total power dissipation all devices Ta = 25 ˚C  
conducting  
Ta = 100 ˚C  
Tstg, Tj  
Storage & operating temperature  
- 55  
1 The maximum permissible junction temperature prior to application of continuous drain-source voltage is limited  
by thermal runaway.  
October 1998  
1
Rev 1.000  

与PHN603S相关器件

型号 品牌 获取价格 描述 数据表
PHN603S,118 NXP

获取价格

PHN603S
PHN603S115 NXP

获取价格

TRANSISTOR 5000 mA, 30 V, 6 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-013AD, FET Ge
PHN70308 NXP

获取价格

N-channel enhancement mode TrenchMOS transistor array
PHN708 NXP

获取价格

7 N-channel 80 mohm FET array enhancement mode MOS transistors
PHN708118 NXP

获取价格

TRANSISTOR 3100 mA, 30 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AG, FET Ge
PHNR-02C-H JST

获取价格

2.0mm pitch/Disconnectable Insulation displacement and Crimp style connectors
PHNR-02-H JST

获取价格

2.0mm pitch/Disconnectable Insulation displacement and Crimp style connectors
PHNR-03C-H JST

获取价格

2.0mm pitch/Disconnectable Insulation displacement and Crimp style connectors
PHNR-03-H JST

获取价格

2.0mm pitch/Disconnectable Insulation displacement and Crimp style connectors
PHNR-04C-H JST

获取价格

2.0mm pitch/Disconnectable Insulation displacement and Crimp style connectors