Datasheet > PHN70308

PHN70308

更新时间： 2024-01-31 01:07:23

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
10页	174K
描述
N-channel enhancement mode TrenchMOS transistor array

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PHN70308 数据手册

Philips Semiconductors

Product specification

N-channel enhancement mode

TrenchMOS transistor array

PHN70308

FEATURES

SYMBOL

QUICK REFERENCE DATA

• 30 mΩ isolation transistor

• 80 mΩ spindle transistors

• TrenchMOS technology

• Logic level compatible

• Surface mount package

isolation FET

V_DS= 25 V

I_D= 5 A

_DS(ON)≤ 30 mΩ

(V_GS= 10 V; isolation FET)

_DS(ON)≤ 80 mΩ

(V_GS= 10 V; spindle FETs)

GENERAL DESCRIPTION

This product is used to drive high performance, three phase brushless d.c. motors in computer disk drives.

The PHN70308 contains seven, n-channel enhancement mode trenchMOS transistors in a surface mounting plastic

package. Six of the transistors can be configured as a three phase bridge to drive the spindle of a disk drive motor.

The remaining transistor delivers power to the three phase bridge during normal operation. In the event of a power

failure occurring whilst the motor is still spinning, this transistor isolates the computer power supply from the back

emf generated by the motor.

The PHN70308 is supplied in the surface mounting SOT341-1 (SSOP28) package.

PINNING

SOT341-1 (SSOP28)

DESCRIPTION PIN

DESCRIPTION

Top view

1,3

5,7

9,11

drain 1

source 1

gate 1

drain 2

source 2

gate 2

drain 3

source 3

gate 3

16,17

source 4

gate 4

gate 5

source 5

gate 6

source 6

gate 7

source 7

13-15,19,22,25,28 drain 4

May 1999

Rev 1.000

12 3 4 5 6 7...10

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