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PHN70308 PDF预览

PHN70308

更新时间: 2024-11-26 22:26:31
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
10页 174K
描述
N-channel enhancement mode TrenchMOS transistor array

PHN70308 数据手册

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Philips Semiconductors  
Product specification  
N-channel enhancement mode  
TrenchMOS transistor array  
PHN70308  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• 30 misolation transistor  
• 80 mspindle transistors  
• TrenchMOS technology  
• Logic level compatible  
• Surface mount package  
isolation FET  
S4  
VDS = 25 V  
ID = 5 A  
G4  
D4  
R
DS(ON) 30 mΩ  
(VGS = 10 V; isolation FET)  
DS(ON) 80 mΩ  
(VGS = 10 V; spindle FETs)  
G6  
G2  
G7  
S7  
G5  
G3  
S6  
D2  
S5  
D3  
R
D1  
G1  
S1  
S2  
S3  
GENERAL DESCRIPTION  
This product is used to drive high performance, three phase brushless d.c. motors in computer disk drives.  
The PHN70308 contains seven, n-channel enhancement mode trenchMOS transistors in a surface mounting plastic  
package. Six of the transistors can be configured as a three phase bridge to drive the spindle of a disk drive motor.  
The remaining transistor delivers power to the three phase bridge during normal operation. In the event of a power  
failure occurring whilst the motor is still spinning, this transistor isolates the computer power supply from the back  
emf generated by the motor.  
The PHN70308 is supplied in the surface mounting SOT341-1 (SSOP28) package.  
PINNING  
SOT341-1 (SSOP28)  
PIN  
DESCRIPTION PIN  
DESCRIPTION  
Top view  
28  
15  
1,3  
2
4
5,7  
6
8
9,11  
10  
12  
drain 1  
source 1  
gate 1  
drain 2  
source 2  
gate 2  
drain 3  
source 3  
gate 3  
16,17  
source 4  
gate 4  
gate 5  
source 5  
gate 6  
source 6  
gate 7  
18  
20  
21  
23  
24  
26  
27  
source 7  
13-15,19,22,25,28 drain 4  
14  
1
May 1999  
1
Rev 1.000  

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