是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.91 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 4 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2.8 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PHN110T/R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 4A I(D) | SO | |
PHN203 | NXP |
获取价格 |
Dual N-channel enhancement mode TrenchMOS transistor | |
PHN203,118 | NXP |
获取价格 |
PHN203 - Dual N-channel TrenchMOS logic level FET SOIC 8-Pin | |
PHN205 | NXP |
获取价格 |
Dual N-channel enhancement mode MOS transistor | |
PHN205/T3 | NXP |
获取价格 |
TRANSISTOR 6400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTI | |
PHN205-T | NXP |
获取价格 |
TRANSISTOR 6400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, FET Ge | |
PHN210 | NXP |
获取价格 |
Dual N-channel enhancement mode TrenchMOS transistor | |
PHN210 | PHILIPS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
PHN210T | NXP |
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Dual N-channel enhancement mode | |
PHN210T,118 | NXP |
获取价格 |
PHN210T - Dual N-channel TrenchMOS intermediate level FET SOIC 8-Pin |