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PDTC123EM,315 PDF预览

PDTC123EM,315

更新时间: 2024-01-06 08:12:23
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
14页 100K
描述
PDTC123E series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm DFN 3-Pin

PDTC123EM,315 技术参数

生命周期:Active零件包装代码:DFN
包装说明:CHIP CARRIER, R-PBCC-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.39其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PBCC-N3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PDTC123EM,315 数据手册

 浏览型号PDTC123EM,315的Datasheet PDF文件第2页浏览型号PDTC123EM,315的Datasheet PDF文件第3页浏览型号PDTC123EM,315的Datasheet PDF文件第4页浏览型号PDTC123EM,315的Datasheet PDF文件第5页浏览型号PDTC123EM,315的Datasheet PDF文件第6页浏览型号PDTC123EM,315的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PDTC123E series  
NPN resistor-equipped transistors;  
R1 = 2.2 kΩ, R2 = 2.2 kΩ  
Product data sheet  
2004 Aug 06  
Supersedes data of 2004 Mar 18  

PDTC123EM,315 替代型号

型号 品牌 替代类型 描述 数据表
PDTC123EE NXP

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