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PDTC123JK PDF预览

PDTC123JK

更新时间: 2024-11-23 22:50:43
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
14页 91K
描述
NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

PDTC123JK 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:PLASTIC, SC-59A, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.83其他特性:BUILT IN BIAS RESISTANCE RATIO IS 21
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON

PDTC123JK 数据手册

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
PDTC123J series  
NPN resistor-equipped transistors;  
R1 = 2.2 k, R2 = 47 kΩ  
Product specification  
2004 Aug 13  
Supersedes data of 2003 Apr 10  

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