Datasheet > PDTC123JT-Q

PDTC123JT-Q

更新时间： 2024-11-25 11:13:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	223K
描述
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩProduction

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PDTC123JT-Q 数据手册

PDTC123JT-Q

50 V, 100 mA NPN resistor-equipped transistor;

R1 = 2.2 kΩ, R2 = 47 kΩ

7 March 2022

Product data sheet

1. General description

NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device

(SMD) plastic package.

PNP complement: PDTA123JT

2. Features and benefits

•

100 mA output current capability

•

Built-in bias resistors

Simplifies circuit design

Reduces component count

Reduces pick and place costs

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Digital application in automotive and industrial segments

Cost-saving alternative for BC847-Q series in digital applications

Controlling IC inputs

Switching loads

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_O

output current

100

2.86

kΩ

bias resistor 1 (input)

bias resistor ratio

[1]

1.54

2.2

R2/R1

[1] See "Section 11: Test information" for resistor calculation and test conditions.

12 3 4 5 6 7...12

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