是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-PBCC-N3 | Reach Compliance Code: | compliant |
风险等级: | 5.6 | 其他特性: | BUILT IN BIAS RESISTOR |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 30 | JESD-30 代码: | R-PBCC-N3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 参考标准: | AEC-Q101; IEC-60134 |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 230 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PDTC123TMB,315 | NXP |
获取价格 |
PDTC123TMB - NPN resistor-equipped transistor | |
PDTC123TS | NXP |
获取价格 |
NPN resistor-equipped transistors; R1 = 2.2 killoohm, R2 = open | |
PDTC123TT | NXP |
获取价格 |
Low VCEsat (BISS) transistors | |
PDTC123TT | NEXPERIA |
获取价格 |
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openProduction | |
PDTC123TT,215 | NXP |
获取价格 |
PDTC123T series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open TO-236 3-Pin | |
PDTC123TT,235 | NXP |
获取价格 |
PDTC123T series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open TO-236 3-Pin | |
PDTC123TU | NXP |
获取价格 |
Low VCEsat (BISS) transistors | |
PDTC123TU | NEXPERIA |
获取价格 |
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openProduction | |
PDTC123TU,115 | NXP |
获取价格 |
PDTC123T series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open SC-70 3-Pin | |
PDTC123Y | NXP |
获取价格 |
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm |