Datasheet > PDTC123YQB

PDTC123YQB

更新时间： 2024-11-16 15:19:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	243K
描述
Production

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数据手册

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PDTC123YQB 数据手册

PDTC123YQB

50 V, 100 mA NPN resistor-equipped transistor;

R1 = 2.2 kΩ, R2: 10 kΩ

24 November 2023

Product data sheet

1. General description

100 mA NPN Resistor-Equipped Transistor (RET) in an ultra small DFN1110D-3 (SOT8015)

leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.

PNP complement: PDTA123YQB

2. Features and benefits

•

100 mA output current capability

Built-in resistors

•

Simplifies circuit design

Reduces component count

Reduces pick and place costs

Low package height of 0.5 mm

Suitable for Automatic Optical Inspection (AOI) of solder joint

3. Applications

•

Digital applications

Cost saving alternative for BC847 series in digital applications

Controlling IC inputs

Switching loads

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_O

output current

100

2.86

5.5

kΩ

bias resistor 1 (input)

bias resistor ratio

[1]

1.54

3.6

2.2

4.5

R2/R1

[1] See "Section 11: Test information" for resistor calculation and test conditions.

12 3 4 5 6 7...11

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