5秒后页面跳转
PDTC123TU,115 PDF预览

PDTC123TU,115

更新时间: 2024-11-25 05:28:35
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
10页 78K
描述
PDTC123T series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open SC-70 3-Pin

PDTC123TU,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
HTS代码:8541.21.00.75风险等级:5.45
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON

PDTC123TU,115 数据手册

 浏览型号PDTC123TU,115的Datasheet PDF文件第2页浏览型号PDTC123TU,115的Datasheet PDF文件第3页浏览型号PDTC123TU,115的Datasheet PDF文件第4页浏览型号PDTC123TU,115的Datasheet PDF文件第5页浏览型号PDTC123TU,115的Datasheet PDF文件第6页浏览型号PDTC123TU,115的Datasheet PDF文件第7页 
PDTC123T series  
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = open  
Rev. 01 — 10 March 2006  
Product data sheet  
1. Product profile  
1.1 General description  
NPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD)  
plastic packages.  
Table 1.  
Product overview  
Type number  
Package  
Philips  
SOT416  
SOT346  
SOT883  
SOT54  
PNP complement  
JEITA  
SC-75  
SC-59A  
SC-101  
SC-43A  
-
JEDEC  
PDTC123TE  
PDTC123TK  
PDTC123TM  
PDTC123TS[1]  
PDTC123TT  
PDTC123TU  
-
PDTA123TE  
PDTA123TK  
PDTA123TM  
PDTA123TS  
PDTA123TT  
PDTA123TU  
TO-236  
-
TO-92  
SOT23  
TO-236AB  
-
SOT323  
SC-70  
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).  
1.2 Features  
I Built-in bias resistors  
I Reduces component count  
I Simplifies circuit design  
I 100 mA output current capability  
I Reduces pick and place costs  
1.3 Applications  
I Digital applications  
I Cost-saving alternative for BC847 series  
in digital applications  
I Control of IC inputs  
I Switching loads  
1.4 Quick reference data  
Table 2.  
Symbol  
VCEO  
IO  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
50  
Unit  
V
collector-emitter voltage  
output current  
open base  
-
-
-
-
100  
2.86  
mA  
k  
R1  
bias resistor 1 (input)  
1.54  
2.2  

PDTC123TU,115 替代型号

型号 品牌 替代类型 描述 数据表
PDTC123EE NXP

类似代替

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
DTC123EM3T5G ONSEMI

功能相似

Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resis
MUN5235T1G ONSEMI

功能相似

NPN SILICON BIAS RESISTOR TRANSISTORS

与PDTC123TU,115相关器件

型号 品牌 获取价格 描述 数据表
PDTC123Y NXP

获取价格

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
PDTC123YE NXP

获取价格

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
PDTC123YK NXP

获取价格

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
PDTC123YK,115 NXP

获取价格

PDTC123Y series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm SMT 3-Pi
PDTC123YM NXP

获取价格

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
PDTC123YM NEXPERIA

获取价格

NPN resistor-equipped transistor; R1 = 2.2 k?, R2 = 10 k?Production
PDTC123YM,315 NXP

获取价格

PDTC123Y series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm DFN 3-Pi
PDTC123YMB NXP

获取价格

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA
PDTC123YMB NEXPERIA

获取价格

NPN resistor-equipped transistor; R1 = 2.2 kΩ
PDTC123YQB NEXPERIA

获取价格

Production