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PDTC123EE PDF预览

PDTC123EE

更新时间: 2024-11-24 04:10:51
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
14页 92K
描述
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm

PDTC123EE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-75
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.13Is Samacsys:N
其他特性:BUILT IN BIAS RESISTANCE RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PDTC123EE 数据手册

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
PDTC123E series  
NPN resistor-equipped transistors;  
R1 = 2.2 kΩ, R2 = 2.2 kΩ  
Product specification  
2004 Aug 06  
Supersedes data of 2004 Mar 18  

PDTC123EE 替代型号

型号 品牌 替代类型 描述 数据表
PDTC123TT,215 NXP

类似代替

PDTC123T series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open TO-236 3-Pin
PDTC123JU NXP

类似代替

NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

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NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
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NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
PDTC123EM NXP

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NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
PDTC123EM NEXPERIA

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NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmProduction
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100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA
PDTC123EMB NEXPERIA

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NPN resistor-equipped transistor; R1 = 2.2 kΩ
PDTC123ES NXP

获取价格

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm