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PDTC123EM PDF预览

PDTC123EM

更新时间: 2024-09-25 04:10:51
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管开关
页数 文件大小 规格书
14页 92K
描述
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm

PDTC123EM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-101
包装说明:CHIP CARRIER, R-PBCC-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.21Is Samacsys:N
其他特性:BUILT IN BIAS RESISTANCE RATIO IS 1外壳连接:COLLECTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PBCC-N3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PDTC123EM 数据手册

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
PDTC123E series  
NPN resistor-equipped transistors;  
R1 = 2.2 kΩ, R2 = 2.2 kΩ  
Product specification  
2004 Aug 06  
Supersedes data of 2004 Mar 18  

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