Datasheet > PDTC123JQB-Q

PDTC123JQB-Q

更新时间： 2024-11-02 11:10:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
20页	358K
描述
50 V, 100 mA NPN resistor-equipped transistorsProduction

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中文翻译

获取价格

数据手册

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PDTC123JQB-Q 数据手册

PDTC143X/123J/143Z/114Y/124XQB-

Q series

50 V, 100 mA NPN resistor-equipped transistors

Rev. 1 — 1 October 2021

Product data sheet

1. General description

100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015)

leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.

Table 1. Product overview

Type number

kΩ

4.7

2.2

4.7

kΩ

Package

JEDEC

MO-340BA

PNP complement:

Nexperia

PDTC143XQB-Q

PDTC123JQB-Q

PDTC143ZQB-Q

PDTC114YQB-Q

PDTC124XQB-Q

SOT8015

PDTA143XQB-Q

PDTA123JQB-Q

PDTA143ZQB-Q

PDTA114YQB-Q

PDTA124XQB-Q

2. Features and benefits

•

100 mA output current capability

Built-in resistors

Simplifies circuit design

Reduces component count

Reduces pick and place costs

Low package height of 0.5 mm

Suitable for Automatic Optical Inspection (AOI) of solder joint

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Digital applications

Cost saving alternative for BC847-Q series in digital applications

Controlling IC inputs

Switching loads

4. Quick reference data

Table 2. Quick reference data

T_amb= 25 °C unless otherwise specified.

Symbol

V_CEO

I_O

Parameter

Conditions

Min

Typ

Max

Unit

collector-emitter voltage

output current

open base

100

12 3 4 5 6 7...20

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