Datasheet > PDTC123JU

PDTC123JU

更新时间： 2023-09-03 20:40:00

品牌	Logo	应用领域
安世 - NEXPERIA		PC 开关光电二极管晶体管
页数	文件大小	规格书
11页	768K
描述
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩProduction

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中文翻译

获取价格

技术参数
数据手册
替代型号

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PDTC123JU 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	100	JESD-609代码：	e3
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.2 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	端子面层：	Matte Tin (Sn)
晶体管元件材料：	SILICON	Base Number Matches：	1

PDTC123JU 数据手册

PDTC123JU

50 V, 100 mA NPN resistor-equipped transistor;

R1 = 2.2 kΩ, R2 = 47 kΩ

1 April 2023

Product data sheet

1. General description

NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted

Device (SMD) plastic package.

PNP complement: PDTA123JU

2. Features and benefits

•

100 mA output current capability

•

Built-in bias resistors

Simplifies circuit design

Reduces component count

Reduces pick and place costs

3. Applications

•

Digital application in industrial segments

Cost-saving alternative for BC847 series in digital applications

Controlling IC inputs

Switching loads

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_O

output current

100

2.86

kΩ

bias resistor 1 (input)

bias resistor ratio

[1]

1.54

2.2

R2/R1

[1] See "Section 11: Test information" for resistor calculation and test conditions.

12 3 4 5 6 7...11

中文翻译

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PDTC123JU 替代型号

型号	品牌	替代类型	描述	数据表
BCR103T	INFINEON	功能相似	NPN Silicon Digital Transistor

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