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BCR103T PDF预览

BCR103T

更新时间: 2024-11-23 22:27:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
8页 199K
描述
NPN Silicon Digital Transistor

BCR103T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-75包装说明:SC-75, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):140 MHzBase Number Matches:1

BCR103T 数据手册

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BCR103...  
NPN Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R =2.2k, R =2.2k)  
1
2
For 6-PIN packages: two (galvanic) internal  
isolated transistors with good matching  
in one package  
BCR103/F  
BCR103U  
BCR103L3/T  
C
C1  
6
B2  
5
E2  
4
3
R2  
R1  
R1  
TR2  
TR1  
R1  
R2  
R2  
1
2
3
1
2
E1  
B1  
C2  
B
E
EHA07174  
EHA07184  
Type  
BCR103  
BCR103F  
BCR103L3  
BCR103T  
BCR103U  
Marking  
WAs  
WAs  
WA  
WAs  
WAs  
Pin Configuration  
Package  
1=B  
1=B  
1=B  
1=B  
2=E 3=C  
2=E 3=C  
2=E 3=C  
2=E 3=C  
-
-
-
-
-
-
-
-
-
-
-
-
SOT23  
TSFP-3  
TSLP-3-4  
SC75  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74  
Aug-29-2003  
1

BCR103T 替代型号

型号 品牌 替代类型 描述 数据表
DTC123EM3T5G ONSEMI

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