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PDTC123JU-Q PDF预览

PDTC123JU-Q

更新时间: 2024-11-25 11:13:51
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
12页 222K
描述
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩProduction

PDTC123JU-Q 数据手册

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PDTC123JU-Q  
50 V, 100 mA NPN resistor-equipped transistor;  
R1 = 2.2 kΩ, R2 = 47 kΩ  
7 March 2022  
Product data sheet  
1. General description  
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted  
Device (SMD) plastic package.  
PNP complement: PDTA123JU  
2. Features and benefits  
100 mA output current capability  
Built-in bias resistors  
Simplifies circuit design  
Reduces component count  
Reduces pick and place costs  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Digital application in automotive and industrial segments  
Cost-saving alternative for BC847-Q series in digital applications  
Controlling IC inputs  
Switching loads  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
50  
V
IO  
output current  
-
-
100  
2.86  
26  
mA  
kΩ  
R1  
bias resistor 1 (input)  
bias resistor ratio  
[1]  
[1]  
1.54  
17  
2.2  
21  
R2/R1  
[1] See "Section 11: Test information" for resistor calculation and test conditions.  
 
 
 
 
 

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