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PDTC123JEF PDF预览

PDTC123JEF

更新时间: 2024-10-31 22:14:19
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
8页 53K
描述
NPN resistor-equipped transistor

PDTC123JEF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-89包装说明:PLASTIC, SC-89, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.59其他特性:BUILT IN BIAS RESISTANCE RATIO IS 21
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PDTC123JEF 数据手册

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
PDTC123JEF  
NPN resistor-equipped transistor  
1999 May 27  
Preliminary specification  

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