Datasheet > DTC123EM3T5G

DTC123EM3T5G

更新时间： 2024-11-24 04:39:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体数字晶体管开关光电二极管
页数	文件大小	规格书
10页	82K
描述
Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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中文翻译

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技术参数
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DTC123EM3T5G 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-F3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	2 weeks	风险等级：	1.21
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	8	JESD-30 代码：	R-PDSO-F3
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.6 W	认证状态：	Not Qualified
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

DTC123EM3T5G 数据手册

DTC114EM3T5G Series

Digital Transistors (BRT)

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The digital transistor

contains a single transistor with a monolithic bias network consisting

of two resistors; a series base resistor and a base−emitter resistor. The

digital transistor eliminates these individual components by

integrating them into a single device. The use of a digital transistor can

reduce both system cost and board space. The device is housed in the

SOT−723 package which is designed for low power surface mount

applications.

http://onsemi.com

NPN SILICON DIGITAL

TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

Features

PIN 1

BASE

(INPUT)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

PIN 2

EMITTER

(GROUND)

• The SOT−723 Package can be Soldered using Wave or Reflow.

• Available in 4 mm, 8000 Unit Tape & Reel

• These are Pb−Free Devices

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

SOT−723

CASE 631AA

STYLE 1

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

CBO

CEO

Vdc

100

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MARKING DIAGRAM

xx = Specific Device Code

(See Marking Table on page 2)

M = Date Code

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 3

DTC114EM3/D

12 3 4 5 6 7...10

中文翻译

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DTC123EM3T5G 替代型号

型号	品牌	替代类型	描述	数据表
DTC123JM3T5G	ONSEMI	类似代替	Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resis
MUN5235T1G	ONSEMI	类似代替	NPN SILICON BIAS RESISTOR TRANSISTORS
DTC123EET1G	ONSEMI	类似代替	Bias Resistor Transistor

与DTC123EM3T5G相关器件

型号	品牌	获取价格	描述	数据表
DTC123EMFHA	ROHM	获取价格	车载数字晶体管与通用品共用数据表。下订单时，请注意下列型号命名方式，编写为车载型号。
DTC123EMT2L	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
DTC123EN	ETC	获取价格	TRANSISTOR \| TO-92
DTC123ERLRM	ONSEMI	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226, 3 PIN
DTC123ERLRP	ONSEMI	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226, 3 PIN
DTC123ES	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| TO-92VAR
DTC123ESA	ROHM	获取价格	Digital transistors (built-in resistors)
DTC123ESA	CJ	获取价格	TO-92S
DTC123ESATP	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC
DTC123ESTP	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, SPT, 3 PIN

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