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DTC123ERLRM PDF预览

DTC123ERLRM

更新时间: 2024-11-27 13:07:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
12页 155K
描述
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226, 3 PIN

DTC123ERLRM 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.33
其他特性:BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):8JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTC123ERLRM 数据手册

 浏览型号DTC123ERLRM的Datasheet PDF文件第2页浏览型号DTC123ERLRM的Datasheet PDF文件第3页浏览型号DTC123ERLRM的Datasheet PDF文件第4页浏览型号DTC123ERLRM的Datasheet PDF文件第5页浏览型号DTC123ERLRM的Datasheet PDF文件第6页浏览型号DTC123ERLRM的Datasheet PDF文件第7页 
Preferred Devices  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base–emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the TO–92  
package which is designed for through hole applications.  
http://onsemi.com  
NPN SILICON  
BIAS RESISTOR  
TRANSISTOR  
COLLECTOR  
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
2
V
CBO  
BASE  
V
CEO  
50  
Vdc  
1
I
C
100  
mAdc  
EMITTER  
Total Power Dissipation  
P
D
(1.)  
@ T = 25°C  
350  
mW  
A
Derate above 25°C  
2.81  
mW/°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to  
Ambient (surface mounted)  
R
357  
°C/W  
θ
JA  
1
Operating and Storage  
Temperature Range  
T , T  
–55 to  
+150  
°C  
J
stg  
2
3
Maximum Temperature for  
Soldering Purposes,  
Time in Solder Bath  
T
L
260  
10  
°C  
Sec  
CASE 29  
TO–92 (TO–226)  
STYLE 1  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
5000/Box  
DTC114E  
DTC124E  
DTC144E  
DTC114Y  
DTC114T  
DTC143T  
DTD113E  
DTC123E  
DTC143E  
DTC143Z  
DTC114E  
DTC124E  
DTC144E  
DTC114Y  
DTC114T  
DTC143T  
DTD113E  
DTC123E  
DTC143E  
DTC143Z  
10  
22  
47  
10  
10  
4.7  
1.0  
2.2  
4.7  
4.7  
10  
22  
47  
47  
Preferred devices are recommended choices for future use  
and best overall value.  
1.0  
2.2  
4.7  
47  
1. Device mounted on a FR–4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
May, 2000 – Rev. 0  
DTC114E/D  

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