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NTTFS4943N

更新时间： 2024-11-17 05:54:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 140K
描述
Power MOSFET 30 V, 41 A, Single N−Channel, μ8FL

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NTTFS4943N 数据手册

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NTTFS4943N  
Power MOSFET  
30 V, 41 A, Single N−Channel, m8FL  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Applications  
7.2 mW @ 10 V  
11 mW @ 4.5 V  
30 V  
41 A  
• DC−DC Converters  
• Power Load Switch  
• Notebook Battery Management  
• Motor Control  
N−Channel MOSFET  
D (5−8)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
V
DSS  
30  
20  
V
V
A
G (4)  
Gate−to−Source Voltage  
V
GS  
Continuous Drain  
I
D
T = 25°C  
12.7  
9.2  
A
Current R  
(Note 1)  
q
JA  
S (1,2,3)  
T = 85°C  
A
Power Dissipation R  
(Note 1)  
T = 25°C  
P
2.17  
W
A
q
A
D
JA  
MARKING DIAGRAM  
1
Continuous Drain  
I
D
T = 25°C  
A
18  
13  
1
Current R  
(Note 1)  
≤ 10 s  
S
S
S
G
D
D
D
D
q
JA  
T = 85°C  
A
4943  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
Power Dissipation  
≤ 10 s (Note 1)  
T = 25°C  
P
I
4.35  
W
A
A
D
D
D
R
Steady  
State  
q
JA  
Continuous Drain  
Current R (Note 2)  
T = 25°C  
A
8.0  
5.7  
D
4943  
A
Y
WW  
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
q
JA  
T = 85°C  
A
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
0.84  
W
A
R
q
JA  
Continuous Drain  
Current R (Note 1)  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
41  
29  
D
q
JC  
(Note: Microdot may be in either location)  
Power Dissipation  
(Note 1)  
P
22.3  
W
R
q
JC  
ORDERING INFORMATION  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
125  
65  
A
A
A
p
DM  
I
DmaxPkg  
†
Device  
Package  
Shipping  
Current Limited by Pkg.  
T = 25°C  
A
NTTFS4943NTAG  
WDFN8 1500/Tape & Reel  
(Pb−Free)  
Operating Junction and Storage Temperature  
T ,  
stg  
−55 to  
+150  
°C  
J
T
Source Current (Body Diode)  
I
25  
6.0  
31  
A
NTTFS4943NTWG WDFN8 5000/Tape & Reel  
S
(Pb−Free)  
Drain to Source DV/DT  
dV/dt  
V/ns  
mJ  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Single Pulse Drain−to−Source Avalanche Energy  
E
AS  
(T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
I = 25 A , L = 0.1 mH, R = 25 W)  
L
pk  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
October, 2009 − Rev. 0  
NTTFS4943N/D  
 
1234567

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