Datasheet > NTES1N02/D

NTES1N02/D

更新时间： 2024-11-22 23:55:07

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
4页	37K
描述
Power MOSFET 50 mAmps， 20 Volts

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NTES1N02/D 数据手册

NTES1N02

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Power MOSFET

50 mAmps, 20 Volts

N–Channel SC–75

• 2.5 V Gate Drive

http://onsemi.com

• Low Threshold Voltage: V = 0.5 to 1.5 V

• High Speed

• Enhancement Mode

• Small Package

50 mAMPS

20 VOLTS

= 10 W

DS(on)

N–Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Gate–to–Source Voltage – Continuous

Drain Current

Symbol

Value

Unit

Vdc

GSS

Vdc

mAdc

– Continuous @ T = 25°C

Total Power Dissipation @ T = 25°C

100

150

°C

Channel Temperature

Operating and Storage Temperature

Range

stg

– 55 to

150

°C

MARKING

DIAGRAM

SC–75/SOT–416

CASE 463

N02

STYLE 1

N02

= Device Code

= Date Code

PIN ASSIGNMENT

3 Drain

Gate 1

2 Source

Top View

ORDERING INFORMATION

Device

Package

Shipping

NTES1N02

SC–75

3000 Tape & Reel

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

January, 2001 – Rev. 0

NTES1N02/D

12 3 4

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