Datasheet > NTF2955

NTF2955

更新时间： 2024-11-25 22:28:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	60K
描述
Power MOSFET

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中文翻译

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NTF2955 数据手册

NTF2955

Power MOSFET

−60 V, −2.6 A, Single P−Channel SOT−223

Features

• TMOS7 Design for low R

DS(on)

• Withstands High Energy in Avalanche and Commutation Modes

http://onsemi.com

Applications

TYP

I MAX

(BR)DSS

DS(on)

• Power Supplies

• PWM Motor Control

• Converters

−60 V

145 mW @ −10 V

−2.6 A

P−Channel

• Power Management

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

DSS

−60

±20

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25°C

−2.6

−2.0

State

T = 85°C

MARKING

DIAGRAM

SOT−223

CASE 318E

STYLE 3

Power Dissipation

(Note 1)

Steady T = 25°C

State

2.3

2955

LWW

Continuous Drain

Current (Note 2)

Steady T = 25°C

−1.7

−1.3

1.0

2955

= Device Code

= Location Code

= Work Week

State

T = 85°C

Power Dissipation

(Note 2)

T = 25°C

PIN ASSIGNMENT

Pulsed Drain Current

tp = 10 ms

−10.4

Drain

Operating Junction and Storage Temperature

T ,

−55 to

175

°C

STG

Single Pulse Drain−to−Source Avalanche

EAS

225

Energy (V = 25 V, V = 10 V, I = 6.7 A,

L = 10 mH, R = 25 W)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Gate Drain Source

THERMAL RESISTANCE RATINGS

Parameter

ORDERING INFORMATION

Symbol

Max

Unit

†

Device

Package

Shipping

Junction−to−Tab (Drain) − Steady State (Note 2)

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 2)

°C/W

NTF2955T1

NTF2955T3

SOT−223

1000/Tape & Reel

4000/Tape & Reel

150

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1. When surface mounted to an FR4 board using 1 in. pad size

(Cu. area = 1.127 in [1 oz] including traces)

2. When surface mounted to an FR4 board using the minimum recommended

pad size (Cu. area = 0.341 in )

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

August, 2004 − Rev. 1

NTF2955/D

12 3 4 5 6

中文翻译

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与NTF2955相关器件

型号	品牌	获取价格	描述	数据表
NTF2955PT1G	ONSEMI	获取价格	1700mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA, LEAD FREE, 318E-04, TO-261, 4
NTF2955T1	ONSEMI	获取价格	Power MOSFET
NTF2955T1G	ONSEMI	获取价格	â60 V, â2.6 A, Single PâChannel SOTâ2
NTF2955T1G	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C
NTF2955T3	ONSEMI	获取价格	Power MOSFET
NTF2N08/D	ETC	获取价格	80 V Power MOSFET
NTF3055-100	ONSEMI	获取价格	Power MOSFET 3.0 Amps 60 Volts N−Channel
NTF3055-100T1	ONSEMI	获取价格	Power MOSFET 3.0 Amps 60 Volts N−Channel
NTF3055-100T1G	ONSEMI	获取价格	Power MOSFET 3.0 Amps, 60 Volts
NTF3055-100T3	ONSEMI	获取价格	Power MOSFET 3.0 Amps 60 Volts N−Channel

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