是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | LEAD FREE, CASE 369AA-01, DPAK-3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.14 | Is Samacsys: | N |
雪崩能效等级(Eas): | 60 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 25 V |
最大漏极电流 (ID): | 32 A | 最大漏源导通电阻: | 0.0105 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
认证状态: | COMMERCIAL | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTD60N02RT4 | ONSEMI |
获取价格 |
Power MOSFET 62 A, 24 V, N−Channel, DPAK | |
NTD60N02RT4 | ROCHESTER |
获取价格 |
32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369AA-01, DPAK-3 | |
NTD60N02RT4G | ONSEMI |
获取价格 |
Power MOSFET 62 A, 24 V, N−Channel, DPAK | |
NTD60N02RT4G | ROCHESTER |
获取价格 |
32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3 | |
NTD60N03 | ONSEMI |
获取价格 |
Power MOSFET 60 Amps, 28 Volts | |
NTD60N03-1 | ONSEMI |
获取价格 |
Power MOSFET 60 Amps, 28 Volts | |
NTD60N03T4 | ONSEMI |
获取价格 |
Power MOSFET 60 Amps, 28 Volts | |
NTD6414AN | ONSEMI |
获取价格 |
N-Channel Power MOSFET 100 V, 32 A, 37 mΩ | |
NTD6414AN-1G | ONSEMI |
获取价格 |
N-Channel Power MOSFET 100 V, 32 A, 37 mΩ | |
NTD6414ANT4G | ONSEMI |
获取价格 |
N-Channel Power MOSFET 100 V, 32 A, 37 mΩ |