是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 4 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 1 week | 风险等级: | 5.66 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 50 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 19 A |
最大漏源导通电阻: | 0.074 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 70 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTD4860N-35G | ONSEMI |
类似代替 |
单 N 沟道,功率 MOSFET,25V,65A,7.5mΩ | |
NTD4965N-35G | ONSEMI |
类似代替 |
Power MOSFET 30 V, 68 A, Single N?Channel, DPAK/IPAK | |
NTD4960N-35G | ONSEMI |
类似代替 |
Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTD6416ANLT4G | ONSEMI |
获取价格 |
N-Channel Power MOSFET 100 V, 19 A, 74 mΩ | |
NTD6416ANT4G | ONSEMI |
获取价格 |
N-Channel Power MOSFET 100 V, 17 A, 81 m | |
NTD65N03R | ONSEMI |
获取价格 |
Power MOSFET 25 V, 65 A, Single N-Channel, DPAK | |
NTD65N03R-001 | ONSEMI |
获取价格 |
TRANSISTOR 32 A, 25 V, 0.0146 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3, FET | |
NTD65N03R-1 | ONSEMI |
获取价格 |
Power MOSFET 25 V, 65 A, Single N-Channel, DPAK | |
NTD65N03R-1G | ONSEMI |
获取价格 |
Power MOSFET 25 V, 65 A, Single N-Channel, DPAK | |
NTD65N03R-35 | ONSEMI |
获取价格 |
Power MOSFET 25 V, 65 A, Single N-Channel, DPAK | |
NTD65N03R-35G | ONSEMI |
获取价格 |
Power MOSFET 25 V, 65 A, Single N-Channel, DPAK | |
NTD65N03RG | ONSEMI |
获取价格 |
Power MOSFET 25 V, 65 A, Single N-Channel, DPAK | |
NTD65N03RT4 | ONSEMI |
获取价格 |
Power MOSFET 25 V, 65 A, Single N-Channel, DPAK |