Datasheet > NTD6415AN

NTD6415AN

更新时间： 2024-09-14 06:00:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	135K
描述
N-Channel Power MOSFET 100 V, 23 A, 55 mΩ

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NTD6415AN 数据手册

NTD6415AN

N-Channel Power MOSFET

100 V, 23 A, 55 mW

Features

• Low R

DS(on)

• High Current Capability

http://onsemi.com

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

MAX

DS(on)

(Note 1)

(BR)DSS

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Symbol

Value

100

$20

Unit

100 V

55 mW @ 10 V

23 A

DSS

N−Channel

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

= 25°C

Power Dissipation

Steady

State

Pulsed Drain Current

t = 10 ms

Operating and Storage Temperature Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (V = 50 Vdc, V = 10 Vdc, I =

L(pk)

23 A, L = 0.3 mH, R = 25 W)

Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

260

°C

THERMAL RESISTANCE RATINGS

Parameter

DPAK

CASE 369AA

STYLE 2

IPAK

CASE 369D

STYLE 2

Symbol

Max

1.8

Unit

Junction−to−Case (Drain) Steady State

Junction−to−Ambient (Note 1)

°C/W

MARKING DIAGRAM

& PIN ASSIGNMENTS

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size,

4 Drain

(Cu Area 1.127 sq in [2 oz] including traces).

Gate

Source

Drain

Gate

Source

Drain

6415AN = Device Code

= Year

= Work Week

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Publication Order Number:

November, 2009 − Rev. 0

NTD6415AN/D

12 3 4 5 6 7

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