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NTD65N03RT4G PDF预览

NTD65N03RT4G

更新时间： 2024-10-01 03:45:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 74K
描述
Power MOSFET 25 V, 65 A, Single N-Channel, DPAK

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NTD65N03RT4G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：LEAD FREE, CASE 369AA-01, DPAK-3针数：4
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.25雪崩能效等级（Eas）：71.7 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：25 V最大漏极电流 (ID)：32 A
最大漏源导通电阻：0.0146 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：130 A
认证状态：Not Qualified表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTD65N03RT4G 数据手册

 浏览型号NTD65N03RT4G的Datasheet PDF文件第2页浏览型号NTD65N03RT4G的Datasheet PDF文件第3页浏览型号NTD65N03RT4G的Datasheet PDF文件第4页浏览型号NTD65N03RT4G的Datasheet PDF文件第5页浏览型号NTD65N03RT4G的Datasheet PDF文件第6页浏览型号NTD65N03RT4G的Datasheet PDF文件第7页 
NTD65N03R  
Power MOSFET  
25 V, 65 A, Single N−Channel, DPAK  
Features  
• Low R  
DS(on)  
• Ultra Low Gate Charge  
http://onsemi.com  
• Low Reverse Recovery Charge  
• Pb−Free Packages are Available  
V
R
DS(on)  
TYP  
I
MAX  
D
(BR)DSS  
Applications  
6.5 mW @ 10 V  
9.7 mW @ 4.5 V  
25 V  
65 A  
• Desktop CPU Power  
• DC−DC Converters  
• High and Low Side Switch  
N−Channel  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Value  
Unit  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
V
25  
"20  
65  
V
V
A
DSS  
G
V
GS  
Continuous Drain  
T
T
T
= 25°C  
= 85°C  
= 25°C  
I
C
C
C
D
D
S
4
Current (R ) Limited  
q
JC  
45  
32  
by Die  
4
Continuous Drain  
I
A
Steady  
State  
4
Current (R ) Limited  
q
JC  
by Wire  
2
1
Power Dissipation  
T
= 25°C  
P
I
50  
W
A
C
D
D
D
1
3
1
2
3
CASE 369D  
DPAK  
(R )  
q
JC  
2
3
Continuous Drain  
Current (Note 1)  
T = 25°C  
A
11.4  
8.9  
D
CASE 369AA  
DPAK  
(Bend Lead)  
STYLE 2  
CASE 369AC  
3 IPAK  
(Straight Lead) (Straight Lead)  
STYLE 2  
T = 85°C  
A
Steady  
State  
Power Dissipation  
(Note 1)  
T = 25°C  
A
P
I
1.88  
W
A
Continuous Drain  
Current (Note 2)  
T = 25°C  
A
9.5  
7.4  
1.3  
D
T = 85°C  
A
Steady  
State  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
W
4
Pulsed Drain Current  
t = 10 ms  
I
130  
A
p
DM  
Drain  
Operating Junction and Storage  
Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
4
Drain  
Drain−to−Source (dv/dt)  
dv/dt  
2.0  
2.1  
V/ns  
A
Source Current (Body Diode)  
I
S
Single Pulse Drain−to−Source Avalanche  
Energy (V = 24 V, V = 10 V, I = 12 A,  
E
71.7  
mJ  
AS  
DD  
GS  
L
L = 1.0 mH, R = 25 W)  
1
Gate  
3
G
3
2
Source  
Source  
1
Gate  
2
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Drain  
Drain  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 in sq pad size  
Y
WW  
65N03 = Device Code  
= Pb−Free Package  
= Year  
= Work Week  
G
(Cu area = 1.127 in sq [1 oz] including traces).  
2. Surface−mounted on FR4 board using the minimum recommended pad size  
(Cu area = 0.15 in sq) [1 oz] including traces.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 3  
NTD65N03R/D  
 
12345678

中文翻译

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NTD65N03RT4G 替代型号

型号 品牌 替代类型 描述 数据表
NTD65N03RT4 ONSEMI

完全替代

 Power MOSFET 25 V, 65 A, Single N-Channel, DPAK
NTD65N03R ONSEMI

完全替代

 Power MOSFET 25 V, 65 A, Single N-Channel, DPAK
NTD65N03RG ONSEMI

类似代替

 Power MOSFET 25 V, 65 A, Single N-Channel, DPAK

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