是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | LEAD FREE, CASE 369AA-01, DPAK-3 | 针数: | 4 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.69 | 雪崩能效等级(Eas): | 61 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.007 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 264 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTD85N02RT4G | ONSEMI |
类似代替 |
Power MOSFET 85 Amps, 24 Volts N-Channel DPAK | |
NTD110N02RT4G | ONSEMI |
类似代替 |
Power MOSFET | |
NTD110N02RG | ONSEMI |
类似代替 |
Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTD4906N | ONSEMI |
获取价格 |
Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK | |
NTD4906N-1G | ONSEMI |
获取价格 |
Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK | |
NTD4906N-1H | ONSEMI |
获取价格 |
14A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND LEAD FREE, CASE 369D-01 | |
NTD4906N-35G | ONSEMI |
获取价格 |
Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK | |
NTD4906N-35H | ONSEMI |
获取价格 |
14A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND LEAD FREE, CASE 369AD-0 | |
NTD4906NT4G | ONSEMI |
获取价格 |
Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK | |
NTD4906NT4H | ONSEMI |
获取价格 |
TRANSISTOR 14 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND LEAD FREE | |
NTD4909N | ONSEMI |
获取价格 |
Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK | |
NTD4909N-1G | ONSEMI |
获取价格 |
Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK | |
NTD4909N-35G | ONSEMI |
获取价格 |
Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK |