5秒后页面跳转
捷配首页

Datasheet > NTD4959NHT4G
NTD4959NHT4G PDF预览

NTD4959NHT4G

更新时间： 2024-11-06 06:00:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 143K
描述
Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK

阅读下载

中文翻译

获取价格

NTD4959NHT4G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：LEAD FREE, CASE 369AA-01, DPAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.26雪崩能效等级（Eas）：112.5 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (ID)：9 A
最大漏源导通电阻：0.0125 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：130 A
认证状态：Not Qualified表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTD4959NHT4G 数据手册

 浏览型号NTD4959NHT4G的Datasheet PDF文件第2页浏览型号NTD4959NHT4G的Datasheet PDF文件第3页浏览型号NTD4959NHT4G的Datasheet PDF文件第4页浏览型号NTD4959NHT4G的Datasheet PDF文件第5页浏览型号NTD4959NHT4G的Datasheet PDF文件第6页浏览型号NTD4959NHT4G的Datasheet PDF文件第7页 
NTD4959NH  
Power MOSFET  
30 V, 58 A, Single N−Channel, DPAK/IPAK  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These are Pb−Free Devices  
http://onsemi.com  
V
R
DS(on)  
MAX  
I MAX  
D
(BR)DSS  
Applications  
9.0 mW @ 10 V  
30 V  
58 A  
• CPU Power Delivery  
• DC−DC Converters  
• Low Side Switching  
12.5 mW @ 4.5 V  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
N−Channel  
G
V
DSS  
V
GS  
"20  
11.5  
9.0  
V
S
Continuous Drain  
I
D
A
T = 25°C  
A
Current (R ) (Note 1)  
q
JA  
T = 85°C  
A
4
Power Dissipation  
(R ) (Note 1)  
T = 25°C  
P
2.0  
W
A
A
D
4
q
JA  
Continuous Drain  
I
D
T = 25°C  
A
9.0  
7.0  
1.3  
2
Current (R ) (Note 2)  
1
q
JA  
T = 85°C  
A
1
2
3
IPAK  
Steady  
State  
3
Power Dissipation  
(R ) (Note 2)  
T = 25°C  
A
P
I
W
A
D
3 IPAK  
CASE 369AD  
(Straight Lead)  
DPAK  
q
JA  
CASE 369AA  
(Bent Lead)  
STYLE 2  
CASE 369D  
(Straight Lead  
DPAK)  
Continuous Drain  
T
T
T
= 25°C  
= 85°C  
= 25°C  
58  
45  
52  
D
C
C
C
Current (R  
(Note 1)  
)
q
JC  
Power Dissipation  
(R ) (Note 1)  
P
D
W
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
q
JC  
Pulsed Drain Current  
t =10ms T = 25°C  
I
130  
45  
A
A
4
p
A
DM  
I
DmaxPkg  
4
Drain  
Drain  
4
Current Limited by Package  
T = 25°C  
A
Drain  
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
43  
6.0  
A
S
dV/dt  
V/ns  
mJ  
2
Single Pulse Drain−to−Source Avalanche  
E
AS  
112.5  
1
2
3
Drain  
1
3
Energy (V = 24 V, V = 10 V,  
DD  
GS  
Gate Drain Source  
Gate Source  
L = 1.0 mH, I  
= 15 A, R = 25 W)  
1
2
3
L(pk)  
G
Gate Drain Source  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Y
WW  
= Year  
= Work Week  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
4959NH= Device Code  
= Pb−Free Package  
G
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
May, 2009 − Rev. 0  
NTD4959NH/D  
12345678

中文翻译

下载PDF

NTD4959NHT4G 替代型号

型号 品牌 替代类型 描述 数据表
NTD4965NT4G ONSEMI

类似代替

 Power MOSFET 30 V, 68 A, Single N?Channel, DPAK/IPAK
NTD4960NT4G ONSEMI

类似代替

 Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK
NTD4857NT4G ONSEMI

类似代替

 Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK

与NTD4959NHT4G相关器件

型号 品牌 获取价格 描述 数据表
NTD4959NT4G ONSEMI

获取价格

 		Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK
NTD4960N ONSEMI

获取价格

 		Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK
NTD4960N-1G ONSEMI

获取价格

 		Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK
NTD4960N-35G ONSEMI

获取价格

 		Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK
NTD4960NT4G ONSEMI

获取价格

 		Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK
NTD4963N ONSEMI

获取价格

 		Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK
NTD4963N-1G ONSEMI

获取价格

 		Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK
NTD4963N-35G ONSEMI

获取价格

 		Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK
NTD4963NT4G ONSEMI

获取价格

 		Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK
NTD4965N ONSEMI

获取价格

 		Power MOSFET 30 V, 68 A, Single N?Channel, DPAK/IPAK

与NTD4959NHT4G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证