Datasheet > NTD4910N

NTD4910N

更新时间： 2024-11-06 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	136K
描述
Power MOSFET 30 V, 37 A, Single N−Channel, DPAK/IPAK

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NTD4910N 数据手册

NTD4910N

Power MOSFET

30 V, 37 A, Single N−Channel, DPAK/IPAK

Features

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These are Pb−Free Devices

http://onsemi.com

MAX

I MAX

(BR)DSS

DS(on)

Applications

9.0 mW @ 10 V

13 mW @ 4.5 V

• CPU Power Delivery

• DC−DC Converters

30 V

37 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Symbol

Value

Unit

DSS

N−Channel

"20

11.2

T = 25°C

Current (R

(Note 1)

)

T = 100°C

7.9

2.6

Power Dissipation

(R ) (Note 1)

T = 25°C

Continuous Drain

T = 25°C

8.2

5.8

Current (R

(Note 2)

)

T = 100°C

Steady

State

CASE 369D

IPAK

(Straight Lead

DPAK)

Power Dissipation

(R ) (Note 2)

T = 25°C

1.37

CASE 369AD

IPAK

(Straight Lead)

CASE 369AA

DPAK

(Bent Lead)

STYLE 2

Continuous Drain

= 25°C

= 100°C

= 25°C

Current (R

(Note 1)

)

Power Dissipation

(R ) (Note 1)

27.3

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Pulsed Drain Current t =10ms T = 25°C

152

DmaxPkg

Current Limited by Package

T = 25°C

Drain

Operating Junction and Storage Temperature

T , T

−55 to

175

°C

stg

Drain

Source Current (Body Diode)

Drain to Source dV/dt

7.0

dV/dt

V/ns

Single Pulse Drain−to−Source Avalanche

25.3

Energy (T = 25°C, V = 50 V, V = 10 V,

L = 0.1 mH, I

= 22.5 A, R = 25 W)

Drain

L(pk)

Gate Drain Source

Gate Source

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Gate Drain Source

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

= Year

= Work Week

4910N = Device Code

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

June, 2009 − Rev. 0

NTD4910N/D

12 3 4 5 6 7 8

中文翻译

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与NTD4910N相关器件

型号	品牌	获取价格	描述	数据表
NTD4910N-1G	ONSEMI	获取价格	Power MOSFET 30 V, 37 A, Single N−Channel, DPAK/IPAK
NTD4910N-35G	ONSEMI	获取价格	Power MOSFET 30 V, 37 A, Single N−Channel, DPAK/IPAK
NTD4910NT4G	ONSEMI	获取价格	Power MOSFET 30 V, 37 A, Single N−Channel, DPAK/IPAK
NTD4913N	ONSEMI	获取价格	Power MOSFET 30 V, 32 A, Single N−Channel, DPAK/IPAK
NTD4913N-1G	ONSEMI	获取价格	Power MOSFET 30 V, 32 A, Single N−Channel, DPAK/IPAK
NTD4913N-35G	ONSEMI	获取价格	Power MOSFET 30 V, 32 A, Single N−Channel, DPAK/IPAK
NTD4913NT4G	ONSEMI	获取价格	Power MOSFET 30 V, 32 A, Single N−Channel, DPAK/IPAK
NTD4959N	ONSEMI	获取价格	Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK
NTD4959N-1G	ONSEMI	获取价格	Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK
NTD4959N-35G	ONSEMI	获取价格	Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK

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