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NTD110N02RT4G PDF预览

NTD110N02RT4G

更新时间： 2024-11-19 22:08:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 67K
描述
Power MOSFET

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中文翻译

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NTD110N02RT4G 数据手册

 浏览型号NTD110N02RT4G的Datasheet PDF文件第2页浏览型号NTD110N02RT4G的Datasheet PDF文件第3页浏览型号NTD110N02RT4G的Datasheet PDF文件第4页浏览型号NTD110N02RT4G的Datasheet PDF文件第5页浏览型号NTD110N02RT4G的Datasheet PDF文件第6页浏览型号NTD110N02RT4G的Datasheet PDF文件第7页 
NTD110N02R  
Power MOSFET  
24 V, 110 A, N−Channel DPAK  
Features  
• Planar HD3e Process for Fast Switching Performance  
• Low R  
to Minimize Conduction Loss  
DS(on)  
http://onsemi.com  
• Low C to Minimize Driver Loss  
iss  
• Low Gate Charge  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
• Optimized for High Side Switching Requirements in  
High−Efficiency DC−DC Converters  
24 V  
4.1 mW @ 10 V  
110 A  
• Pb−Free Packages are Available  
N−Channel  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Drain−to−Source Voltage  
V
24  
V
V
DSS  
G
Gate−to−Source Voltage − Continuous  
Thermal Resistance − Junction−to−Case  
Total Power Dissipation @ T = 25°C  
V
±20  
GS  
R
P
1.35  
110  
°C/W  
W
q
JC  
S
C
D
Drain Current  
4
− Continuous @ T = 25°C, Chip  
I
I
110  
110  
A
A
C
D
− Continuous @ T = 25°C,  
C
D
D
D
Limited by Package  
4
− Continuous @ T = 25°C,  
I
I
32  
A
A
A
Limited by Wires  
1
2
1
− Single Pulse (t = 10 ms)  
110  
p
2
3
3
Thermal Resistance  
− Junction−to−Ambient (Note 1)  
R
P
I
52  
2.88  
17.5  
°C/W  
W
A
CASE 369D  
DPAK  
(Straight Lead)  
STYLE 2  
CASE 369AA  
DPAK  
(Surface Mount)  
STYLE 2  
q
JA  
− Total Power Dissipation @ T = 25°C  
A
D
− Drain Current − Continuous @ T = 25°C  
A
D
Thermal Resistance  
− Junction−to−Ambient (Note 2)  
R
P
100  
1.5  
°C/W  
W
q
JA  
− Total Power Dissipation @ T = 25°C  
MARKING DIAGRAM  
& PIN ASSIGNMENTS  
A
D
− Drain Current − Continuous @ T = 25°C  
I
D
12.5  
A
A
Operating and Storage  
Temperature Range  
T , T  
−55 to  
175  
°C  
J
stg  
4
4
Drain  
Drain  
Single Pulse Drain−to−Source Avalanche  
E
AS  
120  
mJ  
Energy − Starting T = 25°C  
J
(V = 50 Vdc, V = 10 Vdc,  
DD  
GS  
I = 15.5 Apk, L = 1.0 mH, R = 25 W)  
L
G
Maximum Lead Temperature for Soldering  
T
L
260  
°C  
Purposes, (1/8″ from case for 10 s)  
2
1
Gate  
3
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Drain  
Source  
1
2
3
Gate Drain Source  
Y
= Year  
= Work Week  
T110N2 = Device Code  
1. When surface mounted to an FR4 board using 0.5 sq in drain pad size.  
2. When surface mounted to an FR4 board using the minimum recommended  
pad size.  
WW  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
December, 2004 − Rev. 6  
NTD110N02R/D  
 
12345678

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NTD110N02RT4G 替代型号

型号 品牌 替代类型 描述 数据表
NTD85N02R-1G ONSEMI

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 Power MOSFET

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