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NTD4906N-1G PDF预览

NTD4906N-1G

更新时间： 2024-11-06 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 140K
描述
Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK

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中文翻译

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NTD4906N-1G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：IN-LINE, R-PSIP-T3针数：4
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.16Base Number Matches：1

NTD4906N-1G 数据手册

 浏览型号NTD4906N-1G的Datasheet PDF文件第2页浏览型号NTD4906N-1G的Datasheet PDF文件第3页浏览型号NTD4906N-1G的Datasheet PDF文件第4页浏览型号NTD4906N-1G的Datasheet PDF文件第5页浏览型号NTD4906N-1G的Datasheet PDF文件第6页浏览型号NTD4906N-1G的Datasheet PDF文件第7页 
NTD4906N  
Power MOSFET  
30 V, 54 A, Single N−Channel, DPAK/IPAK  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These are Pb−Free Devices  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Applications  
5.5 mW @ 10 V  
8.0 mW @ 4.5 V  
• CPU Power Delivery  
• DC−DC Converters  
30 V  
54 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
D
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Continuous Drain  
Symbol  
Value  
30  
Unit  
V
V
DSS  
N−Channel  
V
GS  
"20  
14  
V
G
I
D
A
T = 25°C  
A
Current (R  
(Note 1)  
)
q
JA  
T = 100°C  
A
9.9  
2.6  
S
4
Power Dissipation  
(R ) (Note 1)  
T = 25°C  
A
P
W
A
D
D
D
4
q
JA  
4
Continuous Drain  
I
D
T = 25°C  
A
10.3  
7.3  
Current (R ) (Note  
q
JA  
T = 100°C  
A
Steady  
State  
2)  
2
1
1
2
3
3
1
2
3
CASE 369D  
IPAK  
(Straight Lead  
DPAK)  
Power Dissipation  
(R ) (Note 2)  
T = 25°C  
A
P
I
1.38  
W
A
q
JA  
CASE 369AD  
IPAK  
(Straight Lead)  
CASE 369AA  
DPAK  
(Bent Lead)  
STYLE 2  
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
54  
38  
D
C
C
Current (R  
(Note 1)  
)
q
JC  
T
C
Power Dissipation  
(R ) (Note 1)  
T
P
37.5  
W
q
JC  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Pulsed Drain Current t =10ms T = 25°C  
I
223  
90  
A
A
p
A
DM  
I
DmaxPkg  
4
Current Limited by Package  
T = 25°C  
A
Drain  
4
4
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
Drain  
Drain  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
32  
6.5  
48  
A
S
dV/dt  
V/ns  
mJ  
Single Pulse Drain−to−Source Avalanche  
E
AS  
Energy (T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
2
1
2
3
L = 0.1 mH, I  
= 31 A, R = 25 W)  
Drain  
L(pk)  
G
1
3
Gate Drain Source  
Gate Source  
1
2
3
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Gate Drain Source  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Y
WW  
= Year  
= Work Week  
4906N = Device Code  
= Pb−Free Package  
G
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
June, 2009 − Rev. 1  
NTD4906N/D  
12345678

中文翻译

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NTD4906N-1G 替代型号

型号 品牌 替代类型 描述 数据表
NTD4858N-35G ONSEMI

类似代替

 Power MOSFET 25 V, 73 A, Single N-Channel, DPAK/IPAK
NTD4809N-35G ONSEMI

类似代替

 Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK
NTD4809NH-35G ONSEMI

类似代替

 Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK

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