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NTD4963N

更新时间： 2024-09-16 06:00:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 142K
描述
Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK

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NTD4963N 数据手册

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NTD4963N  
Power MOSFET  
30 V, 44 A, Single N−Channel, DPAK/IPAK  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• Three Package Variations for Design Flexibility  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
http://onsemi.com  
V
R
MAX  
I
D
MAX  
(BR)DSS  
DS(ON)  
9.6 mW @ 10 V  
16 mW @ 4.5 V  
30 V  
Applications  
44 A  
• CPU Power Delivery  
• DC−DC Converters  
• Recommended for High Side (Control)  
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
G
V
DSS  
V
V
A
V
GS  
20  
S
Continuous Drain  
Current R  
I
D
T = 25°C  
10.0  
N−CHANNEL MOSFET  
A
q
JA  
T = 85°C  
A
7.2  
(Note 1)  
Power Dissipation  
(Note 1)  
4
4
T = 25°C  
A
P
D
1.64  
W
A
4
R
q
JA  
Continuous Drain  
Current R  
ID  
T = 25°C  
A
8.1  
5.8  
1.1  
q
JA  
2
1
1
T = 85°C  
A
Steady  
State  
(Note 2)  
1
2
3
3
2
3
Power Dissipation  
T = 25°C  
A
P
I
W
A
D
CASE 369AC  
3 IPAK  
(Straight Lead)  
R
(Note 2)  
CASE 369AA  
DPAK  
(Bent Lead)  
STYLE 2  
CASE 369D  
IPAK  
(Straight Lead  
DPAK)  
q
JA  
Continuous Drain  
Current R  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
44  
32  
D
q
JC  
(Note 1)  
Power Dissipation  
(Note 1)  
P
D
35.7  
W
A
R
q
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
JC  
Pulsed Drain  
Current  
t =10ms  
p
T = 25°C  
A
I
DM  
132  
35  
4
Drain  
Current Limited by Package  
T = 25°C  
A
I
A
DmaxPkg  
4
4
Drain  
Drain  
Operating Junction and Storage  
Temperature  
T ,  
−55 to  
+175  
°C  
J
T
STG  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
30  
6.0  
A
S
dV/dt  
EAS  
V/ns  
mJ  
Single Pulse Drain−to−Source Avalanche  
Energy (T = 25°C, V = 50 V, V = 10 V,  
33.8  
J
DD  
GS  
2
1
2
3
I = 26 A , L = 0.1 mH, R = 25 W)  
L
pk  
G
Drain  
1
3
Gate Drain Source  
Gate Source  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
L
260  
°C  
1
2
3
Gate Drain Source  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Y
WW  
= Year  
= Work Week  
4963N = Device Code  
= Pb−Free Package  
G
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
December, 2009 − Rev. 0  
NTD4963N/D  
 
1234567

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