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NTD4959N-35G

更新时间： 2024-09-16 06:00:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 146K
描述
Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK

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中文翻译

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NTD4959N-35G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：not_compliant风险等级：5.83
Base Number Matches：1

NTD4959N-35G 数据手册

 浏览型号NTD4959N-35G的Datasheet PDF文件第2页浏览型号NTD4959N-35G的Datasheet PDF文件第3页浏览型号NTD4959N-35G的Datasheet PDF文件第4页浏览型号NTD4959N-35G的Datasheet PDF文件第5页浏览型号NTD4959N-35G的Datasheet PDF文件第6页浏览型号NTD4959N-35G的Datasheet PDF文件第7页 
NTD4959N  
Power MOSFET  
30 V, 58 A, Single N−Channel, DPAK/IPAK  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These are Pb−Free Devices  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Applications  
9.0 mW @ 10 V  
14 mW @ 4.5 V  
• CPU Power Delivery  
• DC−DC Converters  
• Low Side Switching  
30 V  
58 A  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
N−Channel  
V
DSS  
G
V
GS  
"20  
11.5  
9.0  
V
Continuous Drain  
I
D
A
T = 25°C  
A
S
4
Current (R ) (Note 1)  
q
JA  
T = 85°C  
A
4
Power Dissipation  
(R ) (Note 1)  
T = 25°C  
A
P
D
2.0  
W
A
q
JA  
4
Continuous Drain  
I
D
T = 25°C  
A
9.0  
7.0  
1.3  
Current (R ) (Note 2)  
q
JA  
T = 85°C  
A
2
1
Steady  
State  
1
2
3
1
2
3
CASE 369D  
IPAK  
(Straight Lead  
DPAK)  
3
Power Dissipation  
(R ) (Note 2)  
T = 25°C  
A
P
I
W
A
D
q
JA  
CASE 369AD  
IPAK  
(Straight Lead)  
CASE 369AA  
DPAK  
(Bent Lead)  
STYLE 2  
Continuous Drain  
T
T
T
= 25°C  
= 85°C  
= 25°C  
58  
45  
52  
D
C
C
C
Current (R  
(Note 1)  
)
q
JC  
Power Dissipation  
(R ) (Note 1)  
P
D
W
q
JC  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Pulsed Drain Current  
t =10ms T = 25°C  
p
I
130  
45  
A
A
A
DM  
I
DmaxPkg  
4
Drain  
Current Limited by Package  
T = 25°C  
A
4
4
Drain  
Drain  
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
43  
6.0  
A
S
dV/dt  
V/ns  
mJ  
Single Pulse Drain−to−Source Avalanche  
E
AS  
91.0  
2
Energy (V = 24 V, V = 10 V,  
DD  
GS  
1
2
3
Drain  
1
3
L = 1.0 mH, I  
= 13.5 A, R = 25 W)  
Gate Drain Source  
L(pk)  
G
Gate Source  
1
2
3
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
Gate Drain Source  
L
Y
WW  
= Year  
= Work Week  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
4959N = Device Code  
= Pb−Free Package  
G
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
June, 2010 − Rev. 1  
NTD4959N/D  
12345678

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